NXP BF556A,215 N-Channel JFET, 30 V, Idss 3 → 7mA, 3-Pin SOT-23

  • RS Stock No. 626-2355
  • Mfr. Part No. BF556A,215
  • Brand NXP
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

N-channel JFET, NXP

Note

NXP is a trademark of NXP B.V.

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Specifications
Attribute Value
Channel Type N
Idss Drain-Source Cut-off Current 3 → 7mA
Maximum Drain Source Voltage 30 V
Maximum Gate Source Voltage -30 V
Maximum Drain Gate Voltage -30V
Configuration Single
Transistor Configuration Single
Mounting Type Surface Mount
Package Type SOT-23 (TO-236AB)
Pin Count 3
Dimensions 3 x 1.4 x 1mm
Width 1.4mm
Height 1mm
Length 3mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -65 °C
Available to back order for despatch when stock is available
Price Each (In a Pack of 10)
£ 0.243
(exc. VAT)
£ 0.292
(inc. VAT)
Units
Per unit
Per Pack*
10 - 90
£0.243
£2.43
100 - 190
£0.21
£2.10
200 +
£0.203
£2.03
*price indicative
Packaging Options:
Related Products
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency ...
A broad range of NPN and PNP Bipolar ...
Description:
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages. NPN Power Transistors, STMicroelectronics. Bipolar Transistors, STMicroelectronics.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance. Darlington NPN Transistors, Fairchild Semiconductor. Bipolar Transistors, Fairchild Semiconductor.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. P-channel JFET, NXP. JFET Transistors.