Infineon IKW50N60TFKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 911-4798
- Mfr. Part No.:
- IKW50N60TFKSA1
- Brand:
- Infineon
240 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 30)
£2.477
(exc. VAT)
£2.972
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 + | £2.477 | £74.31 |
| *price indicative | ||
- RS Stock No.:
- 911-4798
- Mfr. Part No.:
- IKW50N60TFKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 333 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Dimensions | 16.03 x 21.1 x 5.16mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
- RS Stock No.:
- 911-4798
- Mfr. Part No.:
- IKW50N60TFKSA1
- Brand:
- Infineon
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