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ON Semiconductor FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Maximum Continuous Collector Current80 A
Maximum Collector Emitter Voltage600 V
Maximum Gate Emitter Voltage±20V
Maximum Power Dissipation290 W
Package TypeTO-247
Mounting TypeThrough Hole
Channel TypeN
Pin Count3
Transistor ConfigurationSingle
Dimensions15.6 x 4.7 x 20.6mm
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C