Infineon IHW30N160R2FKSA1 IGBT, 60 A 1600 V, 3-Pin TO-247

  • RS Stock No. 752-8334
  • Mfr. Part No. IHW30N160R2FKSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 312 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
226 In stock - FREE next working day delivery available
Price Each
£ 4.42
(exc. VAT)
£ 5.30
(inc. VAT)
Units
Per unit
1 - 4
£4.42
5 - 9
£4.24
10 - 14
£4.11
15 - 19
£3.98
20 +
£3.89
Packaging Options:
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Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring Trench Stop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 1100 to 1600V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• ...
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring Trench Stop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 1100 to 1600V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• ...