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Infineon IRGP50B60PD1PBF IGBT, 75 A 600 V, 3-Pin TO-247AC, Through Hole

58 In stock - FREE next working day delivery available
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1 - 12£6.55
13 +£5.92

Co-Pack IGBT over 21A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Maximum Continuous Collector Current75 A
Maximum Collector Emitter Voltage600 V
Maximum Gate Emitter Voltage±20V
Package TypeTO-247AC
Mounting TypeThrough Hole
Channel TypeN
Pin Count3
Transistor ConfigurationSingle
Dimensions15.9 x 5.3 x 20.3mm
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C