STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP
- RS Stock No.:
- 204-9871
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
Available to back order for despatch 23/04/2025
Added
Price Each (In a Tube of 50)
£1.11
(exc. VAT)
£1.33
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | £1.11 | £55.50 |
| 100 - 200 | £1.045 | £52.25 |
| 250 - 450 | £1.018 | £50.90 |
| 500 - 950 | £0.992 | £49.60 |
| 1000 + | £0.967 | £48.35 |
| *price indicative | ||
- RS Stock No.:
- 204-9871
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 45 W |
| Package Type | TO-220FP |
| Pin Count | 3 |