Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS Stock No.:
- 168-7764
- Mfr. Part No.:
- GT20J341
- Brand:
- Toshiba
Available to back order for despatch 04/10/2024
Added
Price Each (In a Tube of 50)
£1.557
(exc. VAT)
£1.868
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 + | £1.557 | £77.85 |
| *price indicative | ||
- RS Stock No.:
- 168-7764
- Mfr. Part No.:
- GT20J341
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 45 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 168-7764
- Mfr. Part No.:
- GT20J341
- Brand:
- Toshiba
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