STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247
- RS Stock No. 168-7754
- Mfr. Part No. STGW39NC60VD
- Brand STMicroelectronics
Technical Reference
Legislation and Compliance
COO (Country of Origin): CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 250 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
Available to back order for despatch 18/01/2021
Price Each (In a Tube of 30)
£
2.978
(exc. VAT)
£
3.574
(inc. VAT)
Units
Per unit
Per Tube*
30 +
£2.978
£89.34
*price indicative
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