- RS Stock No.:
- 146-1730
- Mfr. Part No.:
- IXGP20N120B3
- Brand:
- IXYS
- RS Stock No.:
- 146-1730
- Mfr. Part No.:
- IXGP20N120B3
- Brand:
- IXYS
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 180 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 20kHz |
Transistor Configuration | Single |
Dimensions | 10.66 x 4.83 x 16mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Related links
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