onsemi FGAF40N60SMD IGBT, 80 A 600 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 124-1396
- Mfr. Part No.:
- FGAF40N60SMD
- Brand:
- onsemi
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Added
Price Each (In a Tube of 30)
£3.60
(exc. VAT)
£4.32
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | £3.60 | £108.00 |
| 60 + | £3.42 | £102.60 |
| *price indicative | ||
- RS Stock No.:
- 124-1396
- Mfr. Part No.:
- FGAF40N60SMD
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 115 W |
| Package Type | TO-3PF |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.7 x 3.2 x 26.7mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
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