onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 124-1304
- Mfr. Part No.:
- HGTG30N60A4
- Brand:
- onsemi
Available to back order for despatch when stock is available
Added
Price Each (In a Tube of 30)
£5.304
(exc. VAT)
£6.365
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 120 | £5.304 | £159.12 |
| 150 - 270 | £4.726 | £141.78 |
| 300 + | £4.604 | £138.12 |
| *price indicative | ||
- RS Stock No.:
- 124-1304
- Mfr. Part No.:
- HGTG30N60A4
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
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