- RS Stock No.:
- 194-899
- Mfr. Part No.:
- IXGH32N170
- Brand:
- IXYS
Available to back order for despatch 10/12/2024
Added
Price Each
£26.53
(exc. VAT)
£31.84
(inc. VAT)
Units | Per unit |
1 - 4 | £26.53 |
5 - 19 | £22.84 |
20 - 49 | £21.89 |
50 - 99 | £19.84 |
100 + | £19.34 |
- RS Stock No.:
- 194-899
- Mfr. Part No.:
- IXGH32N170
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1700 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247AD |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |