Infineon FF200R12KS4HOSA1, AG-62MM-1 , N-Channel Series IGBT Module, 275 A max, 1200 V, Panel Mount
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|Units||Per unit||Per Tray*|
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
|Maximum Continuous Collector Current||275 A|
|Maximum Collector Emitter Voltage||1200 V|
|Maximum Gate Emitter Voltage||±20V|
|Mounting Type||Panel Mount|
|Maximum Power Dissipation||1.4 kW|
|Dimensions||106.4 x 61.4 x 30.5mm|
|Maximum Operating Temperature||+125 °C|
|Minimum Operating Temperature||-40 °C|