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Vishay VS-GB75YF120N, ECONO2 , N-Channel Dual Half Bridge IGBT Module, 100 A max, 1200 V, PCB Mount

Available to back order for despatch 08/04/2021
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RS Stock No.:
Mfr. Part No.:
COO (Country of Origin):
UnitsPer unitPer Box*
12 +£237.00£2,844.00
*price indicative

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Transistor ConfigurationDual Half Bridge
ConfigurationDual Half Bridge
Maximum Continuous Collector Current100 A
Maximum Collector Emitter Voltage1200 V
Maximum Gate Emitter Voltage±20V
Channel TypeN
Mounting TypePCB Mount
Package TypeECONO2
Pin Count49
Switching Speed8 → 60kHz
Maximum Power Dissipation480 W
Dimensions107.8 x 45.4 x 17mm
Maximum Operating Temperature+150 °C