- RS Stock No.:
- 188-5426
- Mfr. Part No.:
- FM28V020-SG
- Brand:
- Infineon
- RS Stock No.:
- 188-5426
- Mfr. Part No.:
- FM28V020-SG
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Page mode operation
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 32K x 8 SRAM pinout
70-ns access time, 140-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 5 mA (typ)
Standby current 90 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages:
28-pin small outline integrated circuit (SOIC) package
28-pin thin small outline package (TSOP) Type I
32-pin thin small outline package (TSOP) Type I
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Page mode operation
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 32K x 8 SRAM pinout
70-ns access time, 140-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 5 mA (typ)
Standby current 90 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages:
28-pin small outline integrated circuit (SOIC) package
28-pin thin small outline package (TSOP) Type I
32-pin thin small outline package (TSOP) Type I
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Specifications
Attribute | Value |
---|---|
Memory Size | 256kbit |
Organisation | 32K x 8 bit |
Interface Type | Parallel |
Data Bus Width | 8bit |
Maximum Random Access Time | 70ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 28 |
Dimensions | 18.11 x 7.62 x 2.37mm |
Length | 18.11mm |
Width | 7.62mm |
Maximum Operating Supply Voltage | 3.6 V |
Height | 2.37mm |
Maximum Operating Temperature | +85 °C |
Automotive Standard | AEC-Q100 |
Number of Words | 32k |
Minimum Operating Temperature | -40 °C |
Number of Bits per Word | 8bit |
Minimum Operating Supply Voltage | 2 V |
Related links
- Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM1808B-SG
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- Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG
- Infineon 4Mbit Parallel FRAM Memory 44-Pin TSOP, FM22L16-55-TG
- Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- Infineon 256kbit I2C FRAM Memory 8-Pin SOIC, FM24V02A-G
- Infineon 256kbit I2C FRAM Memory 28-Pin SOIC, FM18W08-SGTR