Winbond SLC NAND 1Gbit Parallel Flash Memory 63-Pin VFBGA, W29N01HVBINF
- RS Stock No.:
- 188-2551
- Mfr. Part No.:
- W29N01HVBINF
- Brand:
- Winbond
Available to back order for despatch 28/11/2024
Added
Price Each (In a Tray of 210)
£1.357
(exc. VAT)
£1.628
(inc. VAT)
| Units | Per unit | Per Tray* |
| 210 + | £1.357 | £284.97 |
| *price indicative | ||
- RS Stock No.:
- 188-2551
- Mfr. Part No.:
- W29N01HVBINF
- Brand:
- Winbond
Technical Reference
Legislation and Compliance
Product Details
Density : 1Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Specifications
Attribute | Value |
|---|---|
| Memory Size | 1Gbit |
| Interface Type | Parallel |
| Package Type | VFBGA |
| Pin Count | 63 |
| Organisation | 128M x 8 bit |
| Mounting Type | Surface Mount |
| Cell Type | SLC NAND |
| Minimum Operating Supply Voltage | 2.7 V |
| Maximum Operating Supply Voltage | 3.6 V |
| Block Organisation | Symmetrical |
| Length | 11.1mm |
| Height | 0.6mm |
| Width | 9.1mm |
| Dimensions | 11.1 x 9.1 x 0.6mm |
| Number of Bits per Word | 8bit |
| Number of Words | 128M |
| Series | W29N |
| Maximum Operating Temperature | +85 °C |
| Maximum Random Access Time | 25µs |
| Minimum Operating Temperature | -40 °C |
Related links
- Winbond SLC NAND 2Gbit Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAA
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- Winbond SLC NAND 2Gbit Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAF
- Winbond SLC NAND 1Gbit Parallel Flash Memory 63-Pin VFBGA, W29N01HZBINA
- Winbond SLC NAND 4Gbit Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF
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- Winbond SLC NAND 8Gbit Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA