ON Semiconductor, BDX53BG NPN Digital Transistor, 8 A 80 V dc, Single, 3-Pin TO-220

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available

Specifications
Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 8 A
Maximum Collector Emitter Voltage 80 V dc
Mounting Type Through Hole
Package Type TO-220
Pin Count 3
Minimum DC Current Gain 750
Transistor Configuration Single
Maximum Power Dissipation 65 W
Maximum Collector Emitter Saturation Voltage 4 V dc
Maximum Emitter Base Voltage 5 V dc
Configuration Single
Width 4.83mm
Minimum Operating Temperature -65 °C
Dimensions 10.53 x 4.83 x 9.28mm
Length 10.53mm
Height 9.28mm
Maximum Base Emitter Saturation Voltage 2.5 V dc
Maximum Operating Temperature +150 °C
200 In stock - FREE next working day delivery available
Price Each (In a Tube of 50)
£ 0.559
(exc. VAT)
£ 0.671
(inc. VAT)
Units
Per unit
Per Tube*
50 - 200
£0.559
£27.95
250 - 450
£0.491
£24.55
500 - 1200
£0.478
£23.90
1250 - 2450
£0.466
£23.30
2500 +
£0.454
£22.70
*price indicative
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