onsemi TIP117G PNP Darlington Transistor, 2 (Continuous) A, 4 (Peak) A 100 V dc HFE:500, 3-Pin TO-220
- RS Stock No.:
- 184-1112
- Mfr. Part No.:
- TIP117G
- Brand:
- onsemi
250 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 50)
£0.343
(exc. VAT)
£0.412
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | £0.343 | £17.15 |
| 100 - 450 | £0.249 | £12.45 |
| 500 - 950 | £0.214 | £10.70 |
| 1000 - 2450 | £0.209 | £10.45 |
| 2500 + | £0.204 | £10.20 |
| *price indicative | ||
- RS Stock No.:
- 184-1112
- Mfr. Part No.:
- TIP117G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN), TIP115, TIP116, TIP117 (PNP) are complementary devices.
High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc
= 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Pb-Free Packages are Available
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc
= 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Pb-Free Packages are Available
Specifications
Attribute | Value |
|---|---|
| Transistor Type | PNP |
| Maximum Continuous Collector Current | 2 (Continuous) A, 4 (Peak) A |
| Maximum Collector Emitter Voltage | 100 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 500 |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Collector Emitter Saturation Voltage | 2.5 V dc |
| Maximum Collector Cut-off Current | 2mA |
| Minimum Operating Temperature | -65 °C |
| Length | 10.53mm |
| Maximum Power Dissipation | 50 W |
| Maximum Operating Temperature | +150 °C |
| Base Current | 50mA |
| Height | 15.75mm |
| Dimensions | 10.53 x 4.83 x 15.75mm |
| Width | 4.83mm |