- RS Stock No.:
- 195-2573
- Mfr. Part No.:
- AFGHL50T65SQDC
- Brand:
- onsemi
870 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 30)
£8.564
(exc. VAT)
£10.277
(inc. VAT)
Units | Per unit | Per Tube* |
30 + | £8.564 | £256.92 |
*price indicative |
- RS Stock No.:
- 195-2573
- Mfr. Part No.:
- AFGHL50T65SQDC
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Copacked with SiC schottky barrier diode
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching
Specifications
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum DC Collector Current | 100 A |
Maximum Collector Emitter Voltage | 650 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Maximum Power Dissipation | 238 W |
Transistor Configuration | Single |
Maximum Operating Frequency | 1 MHz |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Dimensions | 15.87 x 4.82 x 20.82mm |
Maximum Operating Temperature | +175 °C |
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