STMicroelectronics BUL1102EFP NPN Bipolar Transistor, 4 A, 8 (Peak) A, 450 V, 3-Pin TO-220FP

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 4 A, 8 (Peak) A
Maximum Collector Emitter Voltage 450 V
Package Type TO-220FP
Mounting Type Through Hole
Maximum Power Dissipation 70 W
Minimum DC Current Gain 12
Transistor Configuration Single
Maximum Emitter Base Voltage 12 V
Pin Count 3
Number of Elements per Chip 1
Width 4.6mm
Length 10.4mm
Height 16.4mm
Maximum Base Emitter Saturation Voltage 1.5 V
Maximum Collector Emitter Saturation Voltage 1.5 V
Dimensions 10.4 x 4.6 x 16.4mm
Maximum Operating Temperature +150 °C
1900 In stock - FREE next working day delivery available
Price Each (In a Tube of 50)
£ 0.684
(exc. VAT)
£ 0.821
(inc. VAT)
Units
Per unit
Per Tube*
50 - 50
£0.684
£34.20
100 - 450
£0.525
£26.25
500 - 950
£0.464
£23.20
1000 - 1950
£0.386
£19.30
2000 +
£0.376
£18.80
*price indicative
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