STMicroelectronics 2STBN15D100 Dual NPN Bipolar Transistor, 12 A, 15 (Peak) A, 100 V, 3-Pin D2PAK

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

Good hFE linearity
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
High fT frequency
Application
Linear and switching industrial equipment

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 12 A, 15 (Peak) A
Maximum Collector Emitter Voltage 100 V
Package Type D2PAK
Mounting Type Surface Mount
Maximum Power Dissipation 70 W
Minimum DC Current Gain 750
Transistor Configuration Common Emitter
Maximum Collector Base Voltage 100 V
Maximum Emitter Base Voltage 5 V
Pin Count 3
Number of Elements per Chip 2
Maximum Collector Emitter Saturation Voltage 1.5 V
Length 10.4mm
Maximum Operating Temperature +150 °C
Height 4.37mm
Width 9.35mm
Dimensions 10.4 x 9.35 x 4.37mm
1000 In stock - FREE next working day delivery available
Price Each (On a Reel of 1000)
£ 0.318
(exc. VAT)
£ 0.382
(inc. VAT)
Units
Per unit
Per Reel*
1000 - 1000
£0.318
£318.00
2000 - 9000
£0.31
£310.00
10000 +
£0.302
£302.00
*price indicative
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