STMicroelectronics 2SD1047 NPN Bipolar Transistor, 12 A, 20 (Peak) A, 140 V, 3-Pin TO

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 12 A, 20 (Peak) A
Maximum Collector Emitter Voltage 140 V
Package Type TO
Mounting Type Through Hole
Maximum Power Dissipation 100 W
Minimum DC Current Gain 50
Transistor Configuration Single
Maximum Collector Base Voltage 200 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 20 MHz
Pin Count 3
Number of Elements per Chip 1
Dimensions 15.8 x 5 x 20.1mm
Height 20.1mm
Maximum Operating Temperature +150 °C
Width 5mm
Length 15.8mm
Maximum Collector Emitter Saturation Voltage 0.7 V
930 In stock - FREE next working day delivery available
Price Each (In a Tube of 30)
£ 2.50
(exc. VAT)
£ 3.00
(inc. VAT)
Units
Per unit
Per Tube*
30 - 90
£2.50
£75.00
120 - 240
£2.166
£64.98
270 - 480
£2.053
£61.59
510 +
£1.844
£55.32
*price indicative
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