MJE802G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP), and MJE800, MJE802, MJE803 (NPN) are complementary devices.

High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages - MJE700 and MJE800 series

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 80 V dc
Package Type TO-225
Mounting Type Through Hole
Maximum Power Dissipation 40 W
Transistor Configuration Single
Maximum Collector Base Voltage 80 V dc
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Dimensions 7.8 x 3 x 11.1mm
Maximum Collector Emitter Saturation Voltage 3 V dc
3000 In stock - FREE next working day delivery available
Price Each (In a Box of 500)
£ 0.206
(exc. VAT)
£ 0.247
(inc. VAT)
Units
Per unit
Per Box*
500 - 1000
£0.206
£103.00
1500 - 2000
£0.191
£95.50
2500 +
£0.178
£89.00
*price indicative
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