onsemi MJD210G PNP Transistor, -5 A, -25 V, 3 + Tab-Pin DPAK
- RS Stock No.:
- 184-4310
- Mfr. Part No.:
- MJD210G
- Brand:
- onsemi
900 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 75)
£0.15
(exc. VAT)
£0.18
(inc. VAT)
| Units | Per unit | Per Tube* |
| 75 + | £0.15 | £11.25 |
| *price indicative | ||
- RS Stock No.:
- 184-4310
- Mfr. Part No.:
- MJD210G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- VN
Product Details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
These Devices are Pb-Free
MJD200 is the complementary NPN device
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
These Devices are Pb-Free
MJD200 is the complementary NPN device
Specifications
Attribute | Value |
|---|---|
| Transistor Type | PNP |
| Maximum DC Collector Current | -5 A |
| Maximum Collector Emitter Voltage | -25 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 12.5 W |
| Minimum DC Current Gain | 45 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 40 V dc |
| Maximum Emitter Base Voltage | 8 V dc |
| Maximum Operating Frequency | 10 MHz |
| Pin Count | 3 + Tab |
| Number of Elements per Chip | 1 |
| Dimensions | 6.73 x 2.38 x 6.22mm |
| Maximum Operating Temperature | +150 °C |
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