Emitter-Switched Bipolar Transistors

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Description Price Maximum DC Collector Current Maximum Collector Source Voltage Maximum Power Dissipation Minimum DC Current Gain Package Type Maximum Base Current Category Dimensions Height Length Width Maximum Base Source Voltage Maximum Gate Source Voltage Maximum Operating Temperature
RS Stock No. 145-4678
Mfr. Part No.FJPF2145TU
£0.277
Each (In a Tube of 50)
Units
5 A 0.209V 40 W 8 TO-220F 1.5A Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 4.9mm ±20V -20 V, +20 V +125 °C
RS Stock No. 864-8969
Mfr. Part No.FJPF2145TU
£0.276
Each (In a Pack of 10)
Units
5 A 0.209V 40 W 8 TO-220F 1.5A Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 4.9mm ±20V -20 V, +20 V +125 °C
RS Stock No. 864-8956
Mfr. Part No.FJP2145TU
£0.69
Each (In a Pack of 10)
Units
5 A 0.202V 120 W 8 TO-220 1.5A Power Transistor 10.67 x 4.83 x 16.51mm 16.51mm 10.67mm 4.83mm ±20V -20 V, +20 V +125 °C
RS Stock No. 145-4456
Mfr. Part No.FJP2145TU
£0.627
Each (In a Tube of 50)
Units
5 A 0.202V 120 W 8 TO-220 1.5A Power Transistor 10.67 x 4.83 x 16.51mm 16.51mm 10.67mm 4.83mm ±20V -20 V, +20 V +125 °C
RS Stock No. 145-4676
Mfr. Part No.FJP2160DTU
£0.378
Each (In a Tube of 50)
Units
2 A 2.21V 100 W 20 TO-220 1A Silicon Transistor 9.9 x 4.5 x 15.95mm 15.95mm 9.9mm 4.5mm ±20V -20 V, +20 V +125 °C
RS Stock No. 864-8950
Mfr. Part No.FJP2160DTU
£0.372
Each (In a Pack of 5)
Units
2 A 2.21V 100 W 20 TO-220 1A Silicon Transistor 9.9 x 4.5 x 15.95mm 15.95mm 9.9mm 4.5mm ±20V -20 V, +20 V +125 °C
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The PNP Bipolar Power Transistor is designed for ...
Description:
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices. Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ ...
The 8 A, 100 V NPN Darlington Bipolar ...
Description:
The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP), and 2N6043, 2N6045 (NPN) are complementary devices. High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 AdcCollector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = ...
The Darlington Bipolar Power Transistor is designed for ...
Description:
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP), and MJE800, MJE802, MJE803 (NPN) are complementary devices. High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 AdcMonolithic Construction with Built-in Base-Emitter Resistors to Limit ...
The Bipolar Power Transistor is designed for general ...
Description:
The Bipolar Power Transistor is designed for general purpose switching and amplifier applications. The TIP3055 (NPN), and TIP2955 (PNP) are complementary devices. DC Current Gain hFE = 20-70 @ IC hFE = 4.0 AdcCollector-Emitter Saturation VoltageVCE(sat) = 1.1 Vdc (Max) @ ICVCE(sat) = 4.0 AdcExcellent Safe Operating Area.