Emitter-Switched Bipolar Transistors

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Description Price Maximum DC Collector Current Maximum Collector Source Voltage Maximum Power Dissipation Minimum DC Current Gain Package Type Maximum Base Current Category Dimensions Height Length Width Maximum Base Source Voltage Maximum Gate Source Voltage Maximum Operating Temperature
RS Stock No. 145-4678
Mfr. Part No.FJPF2145TU
£0.271
Each (In a Tube of 50)
Units
5 A 0.209V 40 W 8 TO-220F 1.5A Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 4.9mm ±20V -20 V, +20 V +125 °C
RS Stock No. 864-8969
Mfr. Part No.FJPF2145TU
£0.276
Each (In a Pack of 10)
Units
5 A 0.209V 40 W 8 TO-220F 1.5A Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 4.9mm ±20V -20 V, +20 V +125 °C
RS Stock No. 145-4456
Mfr. Part No.FJP2145TU
£0.588
Each (In a Tube of 50)
Units
5 A 0.202V 120 W 8 TO-220 1.5A Power Transistor 10.67 x 4.83 x 16.51mm 16.51mm 10.67mm 4.83mm ±20V -20 V, +20 V +125 °C
RS Stock No. 864-8956
Mfr. Part No.FJP2145TU
£0.647
Each (In a Pack of 10)
Units
5 A 0.202V 120 W 8 TO-220 1.5A Power Transistor 10.67 x 4.83 x 16.51mm 16.51mm 10.67mm 4.83mm ±20V -20 V, +20 V +125 °C
RS Stock No. 864-8950
Mfr. Part No.FJP2160DTU
£0.388
Each (In a Pack of 5)
Units
2 A 2.21V 100 W 20 TO-220 1A Silicon Transistor 9.9 x 4.5 x 15.95mm 15.95mm 9.9mm 4.5mm ±20V -20 V, +20 V +125 °C
RS Stock No. 145-4676
Mfr. Part No.FJP2160DTU
£0.421
Each (In a Tube of 50)
Units
2 A 2.21V 100 W 20 TO-220 1A Silicon Transistor 9.9 x 4.5 x 15.95mm 15.95mm 9.9mm 4.5mm ±20V -20 V, +20 V +125 °C
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The ON Semiconductor MJE15032G is a 250V, 8A NPN bipolar transistor within a TO-220-3 package. This bipolar power transistor is for use as high-frequency driver in audio amplifier applications. • High DC current gain• High current gain - bandwidth product• TO-220 through-hole package. Versions Available:102-1375 - tube of 50463-634 - ...
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