SiC N-Channel MOSFET, 55 A, 1200 V, 4-Pin TO-247 ROHM SCT3040KRC14
- RS Stock No.:
- 191-8762
- Mfr. Part No.:
- SCT3040KRC14
- Brand:
- ROHM
Discontinued product
- RS Stock No.:
- 191-8762
- Mfr. Part No.:
- SCT3040KRC14
- Brand:
- ROHM
Technical Reference
Legislation and Compliance
Product Details
SCT3040KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver source terminal is improving high-speed switching performance.
Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating
High efficiency 4pin package
Evaluation board 'P02SCT3040KR-EVK-001'
Application
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating
High efficiency 4pin package
Evaluation board 'P02SCT3040KR-EVK-001'
Application
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 52 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.6V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 262 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 22 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 107 nC @ 18V |