N-Channel MOSFET, 100 A, 25 V, 8-Pin TSDSON Infineon BSC009NE2LSATMA1
- RS Stock No.:
- 906-4441P
- Mfr. Part No.:
- BSC009NE2LSATMA1
- Brand:
- Infineon
14730 In stock - FREE next working day delivery available
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
£0.582
(exc. VAT)
£0.698
(inc. VAT)
| Units | Per unit |
| 10 + | £0.582 |
- RS Stock No.:
- 906-4441P
- Mfr. Part No.:
- BSC009NE2LSATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 25 V |
| Series | OptiMOS |
| Package Type | TSDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 900 μΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 96 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 5.35mm |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Length | 6.1mm |
| Maximum Operating Temperature | +150 °C |
| Height | 1.1mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1V |