- RS Stock No.:
- 864-7922
- Mfr. Part No.:
- FCPF36N60NT
- Brand:
- ON Semiconductor
Discontinued product
- RS Stock No.:
- 864-7922
- Mfr. Part No.:
- FCPF36N60NT
- Brand:
- ON Semiconductor
Legislation and Compliance
Product Details
SupreMOS® MOSFET, Fairchild Semiconductor
Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 36 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220F |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 81 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Transistor Material | Si |
Width | 4.9mm |
Typical Gate Charge @ Vgs | 86 nC @ 10 V |
Length | 10.36mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Height | 16.07mm |
Minimum Operating Temperature | -55 °C |
Series | SupreMOS |