Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3
- RS Stock No.:
- 818-1416
- Mfr. Part No.:
- SI7900AEDN-T1-GE3
- Brand:
- Vishay
Available to back order for despatch 11/09/2024
Added
Price Each (In a Pack of 10)
£1.053
(exc. VAT)
£1.264
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 90 | £1.053 | £10.53 |
| 100 - 240 | £1.00 | £10.00 |
| 250 - 490 | £0.842 | £8.42 |
| 500 - 990 | £0.79 | £7.90 |
| 1000 + | £0.737 | £7.37 |
| *price indicative | ||
- RS Stock No.:
- 818-1416
- Mfr. Part No.:
- SI7900AEDN-T1-GE3
- Brand:
- Vishay
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK 1212-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 36 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.5 W |
| Transistor Configuration | Common Drain |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Width | 3.15mm |
| Typical Gate Charge @ Vgs | 10.5 nC @ 4.5 V |
| Length | 3.15mm |
| Maximum Operating Temperature | +150 °C |
| Height | 1.07mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 818-1416
- Mfr. Part No.:
- SI7900AEDN-T1-GE3
- Brand:
- Vishay