N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KW
- RS Stock No.:
- 805-1135
- Mfr. Part No.:
- 2N7002KW
- Brand:
- onsemi
100 In stock - FREE next working day delivery available
600 available from Europe for delivery within 1 working day(s).
Added
Price Each (On a Tape of 100)
£0.151
(exc. VAT)
£0.181
(inc. VAT)
| Units | Per unit | Per Tape* |
| 100 - 900 | £0.151 | £15.10 |
| 1000 - 2900 | £0.117 | £11.70 |
| 3000 - 8900 | £0.094 | £9.40 |
| 9000 + | £0.091 | £9.10 |
| *price indicative | ||
- RS Stock No.:
- 805-1135
- Mfr. Part No.:
- 2N7002KW
- Brand:
- onsemi
Legislation and Compliance
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.8 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 350 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 2.92mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 1.3mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.2mm |