N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002
- RS Stock No.:
- 671-0312
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
2540 In stock - FREE next working day delivery available
940 available from Europe for delivery within 1 working day(s).
Added
Price Each (In a Pack of 20)
£0.276
(exc. VAT)
£0.331
(inc. VAT)
| Units | Per unit | Per Pack* |
| 20 - 180 | £0.276 | £5.52 |
| 200 - 380 | £0.114 | £2.28 |
| 400 - 780 | £0.108 | £2.16 |
| 800 - 980 | £0.102 | £2.04 |
| 1000 + | £0.082 | £1.64 |
| *price indicative | ||
- RS Stock No.:
- 671-0312
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 115 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 200 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 2.92mm |
| Width | 1.3mm |
| Height | 0.93mm |
| Minimum Operating Temperature | -55 °C |