N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB Infineon IRL530NPBF

RS Stock No.:: 541-1203
Mfr. Part No.:: IRL530NPBF
Brand:: Infineon

N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB Infineon IRL530NPBF

Available to back order for despatch 19/08/2024

Added

Price Each

£0.94

(exc. VAT)

£1.13

(inc. VAT)

Units	Per unit
1 - 9	£0.94
10 - 24	£0.89
25 - 49	£0.83
50 - 99	£0.79
100 +	£0.75

RS Stock No.:: 541-1203
Mfr. Part No.:: IRL530NPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	100 V
Series	LogicFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	79 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Length	10.54mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	34 nC @ 5 V
Width	4.69mm
Minimum Operating Temperature	-55 °C
Height	8.77mm

RS Stock No.:: 541-1203
Mfr. Part No.:: IRL530NPBF
Brand:: Infineon