Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7303PBF
- RS Stock No.:
- 540-9862P
- Mfr. Part No.:
- IRF7303PBF
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 540-9862P
- Mfr. Part No.:
- IRF7303PBF
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Dual N-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.9 A |
| Maximum Drain Source Voltage | 30 V |
| Series | HEXFET |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 50 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 4mm |
| Length | 5mm |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 540-9862P
- Mfr. Part No.:
- IRF7303PBF
- Brand:
- Infineon