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|Maximum Collector Emitter Voltage||200 V|
|Maximum DC Collector Current||15 A|
|Maximum Operating Frequency||25 MHz|
|Maximum Power Dissipation||150 W|
|Minimum DC Current Gain||60 V|
|Mounting Type||Through Hole|
|Number of Elements per Chip||1|
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PNP Power 6 to 30A
Transistors are semiconductor devices used for the amplification or switching of electrical signals and power. A Bipolar Junction Transistor (BJT) is a three-terminal device comprising three layers of doped semiconductor material. A PNP device is one of the two types of bipolar transistors, consisting of a layer of N-doped semiconductor (the "base") sandwiched between two P-doped layers.
Genral purpose Bipolar Junction Transistors may be broadly divided into two areas - Small Signal types, genrarally having a current rating of up to 1000mA, and Power types, with a current rating of more than 1A.
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