- RS Stock No.:
- 146-4243
- Mfr. Part No.:
- IXFT40N85XHV
- Brand:
- IXYS
Discontinued product
- RS Stock No.:
- 146-4243
- Mfr. Part No.:
- IXFT40N85XHV
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Voltage | 850 V |
Package Type | TO-268HV |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 145 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.5V |
Minimum Gate Threshold Voltage | 3.5V |
Maximum Power Dissipation | 860 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 98 nC @ 10 V |
Length | 16.05mm |
Width | 15.15mm |
Maximum Operating Temperature | +150 °C |
Series | HiperFET |
Minimum Operating Temperature | -55 °C |
Height | 5.1mm |
Forward Diode Voltage | 1.4V |