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Specifications
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Dimensions | 6.73 x 6.22 x 2.39mm | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Maximum Continuous Drain Current | -9.9 A | |
| Maximum Drain Source Resistance | 0.1 Ω | |
| Maximum Drain Source Voltage | -40 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 9.5 W | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | DPAK | |
| Pin Count | 3 | |
| Typical Gate Charge @ Vgs | 29.6 nC V @ -10 | |
| Typical Input Capacitance @ Vds | 965 pF V @ -20 | |
| Typical Turn-Off Delay Time | 36.8 ns | |
| Typical Turn-On Delay Time | 4 ns | |
| Width | 6.22mm |
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P-Channel MOSFETs 8 to 14.99A
MOSFETs & JFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

