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|Dimensions||6.73 x 6.22 x 2.39mm|
|Maximum Continuous Drain Current||-9.9 A|
|Maximum Drain Source Resistance||0.1 Ω|
|Maximum Drain Source Voltage||-40 V|
|Maximum Gate Source Voltage||±20 V|
|Maximum Operating Temperature||+150 °C|
|Maximum Power Dissipation||9.5 W|
|Minimum Operating Temperature||-55 °C|
|Mounting Type||Surface Mount|
|Number of Elements per Chip||1|
|Typical Gate Charge @ Vgs||29.6 nC V @ -10|
|Typical Input Capacitance @ Vds||965 pF V @ -20|
|Typical Turn-Off Delay Time||36.8 ns|
|Typical Turn-On Delay Time||4 ns|
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P-Channel MOSFETs 8 to 14.99A
MOSFETs & JFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.