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MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8

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Also available in RS Pack

In stock for next working day delivery

	Category	Power MOSFET
	Channel Mode	Enhancement
	Channel Type	N, P
	Configuration	Quad
	Dimensions	5 x 4 x 1.5mm
	Height	1.5mm
	Length	5mm
	Maximum Continuous Drain Current	-1.42 (P-Channel) A, 1.8 (N-Channel) A
	Maximum Drain Source Resistance	0.35 (N-Channel) Ω
	Maximum Drain Source Voltage	60 (N-Channel) V, -60 (P-Channel) V
	Maximum Gate Source Voltage	±20 V
	Maximum Operating Temperature	+150 °C
	Maximum Power Dissipation	1.36 W
	Minimum Operating Temperature	-55 °C
	Mounting Type	Surface Mount
	Number of Elements per Chip	4
	Package Type	SO
	Pin Count	8
	Typical Gate Charge @ Vgs	3.2 nC V @ 10 (N-Channel), 5.1 nC V @ -10 (P-Channel)
	Typical Input Capacitance @ Vds	141 pF @ -50 V (P-Channel), 166 pF @ 40 V (N-Channel)
	Typical Turn-Off Delay Time	4.9 (N-Channel) ns, 5.8 (P-Channel) ns
	Typical Turn-On Delay Time	1.6 (P-Channel) ns, 1.8 (N-Channel) ns
	Width	4mm