MOSFET IntelliFET N-Ch 60V 2.8A SOT223
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Specifications
| Category | Driver MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Dual Drain, Single | |
| Dimensions | 6.55 x 3.55 x 1.65mm | |
| Height | 1.65mm | |
| Length | 6.55mm | |
| Maximum Continuous Drain Current | 2.8 A | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Maximum Drain Source Voltage | 70 V | |
| Maximum Operating Temperature | +125 °C | |
| Maximum Power Dissipation | 3 W | |
| Minimum Operating Temperature | -40 °C | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-223 | |
| Pin Count | 4 | |
| Typical Turn-Off Delay Time | 34000 ns | |
| Typical Turn-On Delay Time | 8600 ns | |
| Width | 3.55mm |
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N-Channel MOSFETs 2.6A to 2.9A
MOSFETs & JFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.