Fairchild PowerTrench Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949_F085

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
864-8710
Mfr. Part No.:
FDS8949_F085
Brand:
Fairchild Semiconductor
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Brand

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

2

Length

4.9mm

Maximum Operating Temperature

+150 °C

Width

3.9mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

1.575mm

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.