Fairchild Semiconductor
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    • RS Stock No. 671-0340P
    • Brand Fairchild Semiconductor
    • Mfr. Part No. FDC6312P
    • RoHS Status
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    Specifications
    CategoryPower MOSFET
    Channel ModeEnhancement
    Channel TypeP
    ConfigurationDual
    Dimensions3 x 1.7 x 1mm
    Height1mm
    Length3mm
    Maximum Continuous Drain Current2.3 A
    Maximum Drain Source Resistance0.115 Ω
    Maximum Drain Source Voltage20 V
    Maximum Gate Source Voltage±8 V
    Maximum Operating Temperature+150 °C
    Maximum Power Dissipation0.96 W
    Minimum Operating Temperature-55 °C
    Mounting TypeSurface Mount
    Number of Elements per Chip2
    Package TypeSuperSOT
    Pin Count6
    Typical Gate Charge @ Vgs4.4 nC V @ 4.5
    Typical Input Capacitance @ Vds467 pF V @ 10
    Typical Turn-Off Delay Time18 ns
    Typical Turn-On Delay Time8 ns
    Width1.7mm
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    PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

    PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
    The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
    Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

    MOSFET Transistors, Fairchild Semiconductor

    Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V). The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
    Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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