Check our stock volumes
|Dimensions||3 x 1.7 x 1mm|
|Maximum Continuous Drain Current||2.3 A|
|Maximum Drain Source Resistance||0.115 Ω|
|Maximum Drain Source Voltage||20 V|
|Maximum Gate Source Voltage||±8 V|
|Maximum Operating Temperature||+150 °C|
|Maximum Power Dissipation||0.96 W|
|Minimum Operating Temperature||-55 °C|
|Mounting Type||Surface Mount|
|Number of Elements per Chip||2|
|Typical Gate Charge @ Vgs||4.4 nC V @ 4.5|
|Typical Input Capacitance @ Vds||467 pF V @ 10|
|Typical Turn-Off Delay Time||18 ns|
|Typical Turn-On Delay Time||8 ns|
Quickly find other suitable products by removing those features above which are not essential and clicking Find.
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V). The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Add a review - Register / Log In