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|Dimensions||15.87 x 5.31 x 20.7mm|
|Maximum Continuous Drain Current||20 A|
|Maximum Drain Source Resistance||0.27 Ω|
|Maximum Drain Source Voltage||500 V|
|Maximum Gate Source Voltage||±30 V|
|Maximum Operating Temperature||+150 °C|
|Maximum Power Dissipation||280 W|
|Minimum Operating Temperature||-55 °C|
|Mounting Type||Through Hole|
|Number of Elements per Chip||1|
|Typical Gate Charge @ Vgs||105 nC V @ 10|
|Typical Input Capacitance @ Vds||3100 pF V @ 25|
|Typical Turn-Off Delay Time||45 ns|
|Typical Turn-On Delay Time||18 ns|
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N-Channel MOSFETs 20A to 20.9A
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
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