Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute
Value
Channel Type
N, P
Maximum Continuous Drain Current
4.9 A, 6.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
29 mΩ, 58 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
22 nC @ 10 V, 23 nC @ 10 V
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
4mm
Priced to Clear
Yes
Height
1.5mm
Minimum Operating Temperature
-55 °C
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