A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Attribute
Value
Channel Type
N
Idss Drain-Source Cut-off Current
100mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
8 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
160pF
Source Gate On-Capacitance
160pF
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Minimum Operating Temperature
-55 °C
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