Vishay VS-GA300TD60S, INT-A-PAK , N-Channel Series IGBT Module, 530 A max, 600 V, Surface Mount

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
873-2323
Mfr. Part No.:
VS-GA300TD60S
Brand:
Vishay
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Brand

Vishay

Maximum Continuous Collector Current

530 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.14 kW

Configuration

Series

Package Type

INT-A-PAK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

7

Switching Speed

1kHz

Transistor Configuration

Series

Dimensions

108 x 62 x 15mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
CN

IGBT Modules, Vishay


Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)


IGBT Modules, Vishay


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.