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|Dimensions||107.5 x 45 x 17mm|
|Maximum Collector Emitter Voltage||1200 V|
|Maximum Continuous Collector Current||50 A|
|Maximum Power Dissipation||350 W|
|Mounting Type||Through Hole|
|Package Type||ECONOPACK 2|
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IGBT Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.