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Specifications
| Configuration | Hex | |
| Dimensions | 107.5 x 45 x 17mm | |
| Height | 17mm | |
| Length | 107.5mm | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Power Dissipation | 350 W | |
| Mounting Type | Through Hole | |
| Package Type | ECONOPACK 2 | |
| Pin Count | 17 | |
| Width | 45mm |
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IGBT Modules, Infineon
IGBT Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

