Infineon
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1£166.99
5£121.44
In stock for next working day delivery
  • RS Stock No. 754-5342
  • Brand Infineon
  • Mfr Part No. BSM50GD120DN2
  • RoHS Status
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Specifications

ConfigurationHex
Dimensions107.5 x 45 x 17mm
Height17mm
Length107.5mm
Maximum Collector Emitter Voltage1200 V
Maximum Continuous Collector Current50 A
Maximum Power Dissipation350 W
Mounting TypeThrough Hole
Package TypeECONOPACK 2
Pin Count17
Width45mm
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IGBT Modules, Infineon

IGBT Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.