Infineon BFP840ESDH6327XTSA1 NPN Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343

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Packaging Options:
RS Stock No.:
826-8992
Mfr. Part No.:
BFP840ESDH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

75 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

2.9 V

Maximum Operating Frequency

80 GHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

SiGe RF Bipolar Transistors, Infineon


A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.


Bipolar Transistors, Infineon