| Attributes |
Category -
Power MOSFET
Channel Mode -
Enhancement
Channel Type -
P
Configuration -
Single
Maximum Continuous Drain Current -
1.8A
Maximum Drain Source Resistance -
3Ω
Maximum Drain Source Voltage -
200V
Maximum Gate Source Voltage -
±20V
Maximum Operating Temperature -
150°C
Minimum Operating Temperature -
-55°C
Mounting -
Through Hole
Number of Elements per Chip -
1
Product Height -
8.76
Product Length -
10.54
Product Width -
4.7
Supplier Package -
TO-220
Typical Fall Time -
8ns
Typical Rise Time -
15ns
Typical Turn-Off Delay Time -
10ns
Typical Turn-On Delay Time -
8ns
|
Category -
Power MOSFET
Channel Mode -
Enhancement
Channel Type -
P
Configuration -
Single
Maximum Continuous Drain Current -
1.8A
Maximum Drain Source Resistance -
3Ω
Maximum Drain Source Voltage -
200V
Maximum Gate Source Voltage -
±20V
Maximum Operating Temperature -
150°C
Minimum Operating Temperature -
-55°C
Mounting -
Through Hole
Number of Elements per Chip -
1
Product Height -
8.77
Product Length -
10.54
Product Width -
4.69
Supplier Package -
TO-220AB
Typical Fall Time -
8ns
Typical Rise Time -
15ns
Typical Turn-Off Delay Time -
10ns
Typical Turn-On Delay Time -
8ns
|
